Memory system and controlling method

ABSTRACT

According to one embodiment, a memory system includes a controller. The controller controls throttling to make a performance value of the memory system fall between a first performance value and a second performance value. The throttling limits the number of times of accesses per unit time to a nonvolatile memory. The first performance value is calculated based on a third performance value of the memory system and is greater than the third performance value. The third performance value is a value which is expected to be reached at a time when a first period has elapsed since the memory system started being used if throttling is not performed. The second performance value is provided between the first performance value and the third performance value.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.15/194,788, filed Jun. 28, 2016 and claims the benefit of U.S.Provisional Application No. 62/292,889, filed Feb. 9, 2016, the entirecontents of each of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a memory system and acontrolling method.

BACKGROUND

In recent years, memory systems comprising nonvolatile memories havebecome widespread. As one such memory system, a solid-state drive (SSD)comprising a NAND flash memory (hereinafter referred to as a NANDmemory) is known. The SSD is used as main storage of various informationprocessing apparatuses.

In the SSD, a controller which executes overall control over eachstructural element, more specifically, controls access to the NANDmemory in accordance with a request from a host device, is installed. Inaddition, the SSD is required to operate with priority given toperformance, or conversely, operate with a certain level of performancemaintained during a predetermined period, even if the performance isrestrained to some extent, for example, in accordance with a request(setting) of the host device. To respond to such a request, it isimportant to appropriately control the performance of the SSD by thecontroller in consideration of a life.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing an example of a configuration of a memorysystem of an embodiment.

FIG. 2 is a diagram showing a structural example of blocks of a memorycell array.

FIG. 3 is a diagram showing a format of a Control Extension mode pagedefined according to the SCSI standard.

FIG. 4 is a diagram for explaining how performance of the memory systemof the embodiment is controlled.

FIG. 5 is a diagram showing actual storage capacity including a sparearea of a storage device.

FIG. 6 is a diagram showing a change in the value of ECC added to writedata for error correction.

FIG. 7 is a flowchart showing a general procedure through which theperformance is controlled by throttling in the memory system of theembodiment.

FIG. 8 is a flowchart showing a procedure for periodic operationsrelated to throttling of the memory system of the embodiment.

FIG. 9 is a flowchart showing a procedure for control related tothrottling at the time of detection of an erroneous power supply shutoffof the memory system of the embodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a memory system includes anonvolatile memory and a controller. The controller is configured tocontrol access to the nonvolatile memory based on a command from a hostdevice. The controller is configured to control throttling to make aperformance value of the memory system fall between a first performancevalue and a second performance value, when a first command related to asetting of the memory system is received from the host device. Thethrottling limits the number of times of accesses per unit time to thenonvolatile memory. The first performance value is a value which iscalculated based on a third performance value of the memory system andwhich is greater than the third performance value. The third performancevalue is a value which is expected to be reached at a time when a firstperiod has elapsed since the memory system started being used ifthrottling is not performed. The second performance value is a valueprovided between the first performance value and the third performancevalue.

FIG. 1 is a diagram showing an example of a configuration of a memorysystem 1 of a present embodiment. The memory system 1 is a storagedevice configured to write data to a nonvolatile memory and read datafrom the nonvolatile memory. The memory system 1 is implemented as, forexample, an SSD comprising a NAND memory 20. An example in which theNAND memory 20 is used as the nonvolatile memory will be hereindescribed. However, the nonvolatile memory may be a nonvolatilesemiconductor memory other than the NAND memory 20, such as athree-dimensional structure flash memory, a resistive random accessmemory (ReRAM), or a ferroelectric random access memory (FeRAM).

The memory system 1 is used as an external storage device of a hostdevice 2. The host device 2 may be, for example, an informationprocessing apparatus such as a personal computer or a server, a mobilephone, a camera, a mobile device such as a tablet computer or asmartphone, a game console, or vehicle-mounted equipment such as asatellite navigation system.

It is herein assumed that as an interface for interconnection betweenthe memory system 1 and the host device 2, an interface conforming tothe Small Computer System Interface (SCSI) standard, for example, SerialAttached SCSI (SAS) is used. According to the SCSI standard, variouscommands for determining the settings of a peripheral device (SCSIdevice) are defined. The memory system 1 of the present embodimentappropriately controls the performance of the memory system 1 inaccordance with the various commands.

As shown in FIG. 1, the memory system 1 comprises a controller 10, theNAND memory 20, a dynamic random access memory (DRAM) 30, a temperaturesensor 40, a SCSI connector 50, a power supply circuit 60, etc.

The controller 10 executes overall control over each structural elementof the memory system 1. Upon receipt of a command from the host device20 via the SCSI connector 50, the controller 10 executes controlaccording to the command. The controller 10 comprises a processor 11, aSCSI interface 12, an encoding/decoding module 13, a NAND interface 14,a static random access memory (SRAM) 15, a DRAM interface 16, atemperature sensor interface 17, etc., which will be described later.The processor 11, the SCSI interface 12, the encoding/decoding module13, the NAND interface 14, the SRAM 15, the DRAM interface 16, and thetemperature sensor interface 17 are interconnected via a bus 18.

The NAND memory 20 comprises one or more memory chips comprising amemory cell array. The memory cell array comprises memory cells arrangedin a matrix. The memory cell array comprises blocks, which are units ofdata deletion. Each of the blocks is constituted of physical sectors.

FIG. 2 is a diagram showing a structural example of the blocks of thememory cell array. FIG. 2 shows one of the blocks constituting thememory cell array. The other blocks of the memory cell array also havethe same structure as shown in FIG. 2. As shown in FIG. 2, a block BLKof the memory cell array comprises m+1 (m is an integer greater than orequal to zero) NAND strings NS. Each of the NAND strings NS comprisesn+1 (n is an integer greater than or equal to zero) memory celltransistors MT0 to MTn which are connected in series with a diffusionarea (a source area or a drain area) shared between adjacent memory celltransistors MT, and select transistors ST1 and ST2 disposed at both endsof a column of the n+1 memory cell transistors MT0 to MTn.

Word lines WL0 to WLn are connected to control gate electrodes of thememory cell transistors MT0 to MTn constituting the NAND strings NS,respectively, and memory cell transistors MTi (i=0 to n) in therespective NAND strings NS are connected in common by the same word lineWLi (i=0 to n). That is, control gate electrodes of the memory celltransistors MTi in the same row in the block BLK are connected to thesame word line WLi.

Each of the memory cell transistors MT0 to MTn is constituted of afield-effect transistor having a stacked gate structure formed on asemiconductor substrate. The stacked gate structure herein includes acharge storage layer (floating gate electrode) which is formed on thesemiconductor substrate with a gate insulating film interposedtherebetween, and a control gate electrode which is formed on the chargestorage layer with a gate insulating film interposed therebetween. Athreshold voltage of the memory cell transistors MT0 to MTn varies inaccordance with the number of electrons stored in the floating gateelectrode, and data can be stored in accordance with variations in thethreshold voltage.

Bit lines BL0 to BLm are connected to the drains of m+1 selecttransistors ST1 in the one block BLK, respectively, and a select gateline SGD is connected in common to the gates. In addition, the sourcesof the select transistors ST1 are connected to the drains of the memorycell transistors MT0. Similarly, a source line SL is connected in commonto the sources of m+1 select transistors ST2 in the one block BLK, and aselect gate line SGS is connected in common to the gates. The drains ofthe select transistors ST2 are connected to the sources of the memorycell transistors MTn.

Each of the memory cells is connected to a bit line as well as a wordline. Each of the memory cells can be identified by an address whichidentifies a word line and an address which identifies a bit line. Asdescribed above, data in memory cells (memory cell transistors MT) inthe same block BLK is erased all together. On the other hand, data isread and written in units of pages. If only two values can be stored ineach of the memory cells, one page corresponds to one physical sector MSincluding memory cells connected to one word line.

If multiple values can be stored in each of the memory cells and thememory cells operate in a single level cell (SLC) mode, one physicalsector MS corresponds to one page. If the memory cells operate in amultilevel cell (MLC) mode, one physical sector MS corresponds to Npages (N is a natural number greater than or equal to two). If N=2, onephysical sector MS corresponds to two pages, and if N=3, one physicalsector MS corresponds to three pages.

At the time of a read operation and a program operation, one word lineis selected and one physical sector MS is selected in accordance with aphysical address. Pages in the physical sector MS are switched by thephysical address.

As shown in FIG. 1, the NAND memory 20 comprising the one or more memorychips comprising the memory cell array comprising the blocks having theabove-described structure is connected to the NAND interface 14 of thecontroller 10.

FIG. 1 is referred to again.

The DRAM 30 functions as a buffer for transferring write data and readdata between the host device 2 and the NAND memory 20. The memory system1 may comprise a magnetoresistive random access memory (MRAM) or aferroelectric random access memory (FeRAM) instead of the DRAM 30. TheDRAM 30 is connected to the DRAM interface 16 of the controller 10.

The temperature sensor 40 detects a temperature in the vicinity of, forexample, the controller 10 or the NAND memory 20 in the memory system 1.The temperature detected by the temperature sensor 40 is used to, forexample, monitor whether or not the temperature in the memory system 1has fallen within a recommended operating temperature range. Thetemperature sensor 40 is connected to the temperature sensor interface17 of the controller 10.

The SCSI connector 50 is a coupling unit for connecting the host device2 and the memory system 1. The SCSI connector 50 is connected to theSCSI interface 12 of the controller 10. A command, user data, etc., fromthe host device 2 are received by the SCSI interface 12 via the SCSIconnector 50. In addition, user data read from the NAND memory 20, aresponse from the controller 10 (to a command), etc., are transmitted tothe host device 2 via the SCSI connector 50. The shape, etc., of theSCSI connector 50 are defined in conformity with the SCSI standard.

The power supply circuit 60 is connected to the host device 2 via theSCSI connector 50, and supplied with power from the host device 2 viathe SCSI connector 50. The power supply circuit 60 is also connected tothe controller 10, the NAND memory 20, the DRAM 30, and the temperaturesensor 40 by a power supply line not shown in FIG. 1, and can supply thecontroller 10, the NAND memory 20, the DRAM 30, and the temperaturesensor 40 with power supplied from the host device 2.

Next, the processor 11, the SCSI interface 12, the encoding/decodingmodule 13, the NAND interface 14, the

SRAM 15, the DRAM interface 16, and the temperature sensor interface 17of the controller 10 will be described.

For example, when the memory system 1 is started, firmware stored in theNAND memory 20 is separately loaded into the SRAM 15 and the DRAM 30 inthe controller 10. More specifically, a module related to a frequentlyperformed process and a module related to a process which requires highresponsiveness are loaded into the SRAM 15, and a module related to aprocess which is infrequently performed and does not require highresponsiveness is loaded into the DRAM 30. It is predetermined whichpart of the firmware is loaded into the SRAM 15 and which part is loadedinto the DRAM 30. The processor 11 performs a predetermined process inaccordance with the firmware. It suffices if the processor 11 canperform a predetermined process in accordance with the firmware, and theprocessor 11 is, for example, a central processing unit (CPU). It shouldbe noted that the SRAM 15 also functions as a storage area of variousmanagement data items. One of the management data items is used tocontrol the transfer of write data and read data between the host device2 and the NAND memory 20. This management data item includes, forexample, mapping data indicating the relationship between a logicaladdress specified by the host device 2 and a storage location (physicaladdress) in the NAND memory 20. Various management data items (forexample, updated portions) in the SRAM 15 are stored in the NAND memory20 (made nonvolatile) with a predetermined timing.

For example, the processor 11 performs a read process for the NANDmemory 20 in accordance with a read command issued from the SCSIinterface 12. The processor 11 performs the read process by acquiring aphysical location in the NAND memory 20 corresponding to a physicaladdress of read data from the management data items stored in the SRAM15, and notifying the NAND interface 14 of the acquired physicallocation. The processor 11 uses the DRAM 30 as a buffer of read data.The read data is transmitted to the host device 2 via theencoding/decoding module 13 (decoding module), the DRAM 30, and the SCSIinterface 12. In addition, the processor 11 performs a write process forthe NAND memory 20 in accordance with a write command issued from theSCSI interface 12. The processor 11 writes a codeword created by theencoding/decoding module 13 (encoding module) to the NAND memory 20. Theprocessor 11 uses the DRAM 30 as a buffer of data for writing. Inaddition, the processor 11 registers a mapping of a logical address anda physical location in the NAND memory 20 of written data in themanagement data items stored in the SRAM 15. Moreover, the processor 11determines the settings of the memory system 1 in accordance with acommand for setting issued from the SCSI interface 12. The processor 11stores a set value (parameter) in the SRAM 15 as one of the managementdata items. As described above, various management data items (forexample, updated portions) in the SRAM 15 are stored in the NAND memory20 (made nonvolatile) with a predetermined timing.

The SCSI interface 12 performs communication for delivering a command,user data, a response to a command, etc., between the host device 2 andthe controller 10, more specifically the processor 11, which areconnected via the SCSI connector 50.

First, the encoding/decoding module 13 encodes user data buffered by theDRAM 30, and creates a codeword constituted of data and a redundancy(parity) (encoding module). Second, the encoding/decoding module 13acquires a codeword read from the NAND memory 20 from the NAND interface14, and decodes the acquired codeword (decoding module). If errorcorrection fails at the time of decoding, the encoding/decoding module13 notifies the processor 11 of a read error.

The NAND interface 14 directly controls the writing of data to the NANDmemory 20 and the reading of data from the NAND 20 on the basis of acommand from the processor 11. As described above, the SRAM 15 functionsas a storage area of various management data items, as well asfunctioning as a storage area of firmware. The DRAM interface 16directly controls the writing of data to the DRAM 30 and the reading ofdata from the DRAM 30 on the basis of a command from the processor 11.The temperature sensor interface 17 can directly control the reading ofdata (temperature data) from the temperature sensor 40 on the basis of acommand from the processor 11.

Next, an operation example in which the controller 10 appropriatelycontrols the performance of the memory system 1 in accordance with acommand from the host device 2 in the memory system 1 having theabove-described configuration will be described.

As described above, in the present embodiment, it is assumed that aninterface conforming to the SCSI standard is used as an interface forinterconnection between the memory system 1 and the host device 2.According to the SCSI standard, a MODE SELECT command is defined as oneof the commands related to the settings of a peripheral device. The MODESELECT command transfers a mode page with its purpose defined by a pagecode and a subpage code. The host device 2 can optionally determine thesettings of the memory system 1 by issuing the MODE SELECT command fortransferring a mode page in which a page code and a subpage code areappropriately set to the memory system 1. In other words, if the MODESELECT command is issued by the host device 2, the memory system 1determines the settings as indicated by the mode page transferred by theMODE SELECT command, and thereafter operates in accordance with thesettings.

FIG. 3 is a diagram showing a format of a Control Extension mode pagewhich is one of the mode pages defined according to the SCSI standard.

For the mode pages, two kinds of format, a page_0 mode page format and aSUB_PAGE mode page format, are defined, and the latter SUB_PAGE modepage format is applied to the Control Extension mode page. The page_0mode page format and the SUB_PAGE mode page format are distinguished bythe value of an SPF bit (a1 of FIG. 3). If the value of the SPF bit is“0b”, the format is the page_0 mode page format, and if the value of theSPF bit is “1b”, the format is the SUB_PAGE mode page format.

In addition, if the value of a PAGE CODE bit (a2 of FIG. 3) is “0Ah”,and the value of a SUBPAGE CODE bit (a3 of FIG. 3) is “01h”, it isindicated that the mode page is a Control Extension mode page.

As shown in FIG. 3, the Control Extension mode page is provided with adevice life control (DLC) bit (a4 of FIG. 3). If the value of the DLCbit is “1b”, it is indicated that the performance must not be decreasedto prolong the life of the device. On the other hand, if the value ofthe DLC bit is “0b”, it is indicated that the performance can bedecreased to prolong the life of the device. However, even if theperformance can be decreased, a storage device such as the memory system1 of the present embodiment, for which a lifetime is generally set, isrequired to operate with a certain level or higher of performance duringthe lifetime.

On the other hand, the storage device such as the memory system 1 of thepresent embodiment has a limited number of program and erase (PE)cycles, and for example, if it continues being used with a writeamplification factor kept high, the number of PE cycles can reach itsupper limit (the life ends) before the expiration of a lifetime set forthe storage device. The write amplification factor is an index thatrepresents how many times greater the amount of data actually written toa nonvolatile memory is than the amount of data required to be written.Accordingly, the storage device is required to operate with substandardperformance with which the number of PE cycles dose not reach the upperlimit at least during the lifetime of the device.

In consideration of this point, the controller 10 appropriately controlsthe performance of the memory system 1, for example, such that a certainlevel or higher of performance is maintained during a predeterminedlifetime while the number of PE cycles do not reach its upper limitbefore the expiration of the predetermined lifetime, if a ControlExtension mode page with a DLC bit set to “0b” as the initial settingsis transferred from the host device 2 by a MODE SELECT command.

FIG. 4 is a conceptual diagram for explaining how the controller 10controls the performance of the memory system 1.

It is herein presumed that when the host device 2 starts using thememory system 1, a Control Extension mode page with a DLC bit set to“0b” has already been transferred from the host device 2 to the memorysystem 1 by a MODE SELECT command.

The memory system 1 of the present embodiment has a throttling functionof intentionally decreasing the performance (write performance) of thememory system 1. Throttling limits the number of times of accesses perunit time to the NAND memory 20, and is performed by, for example,adjusting a loop interval between write/erase operations (voltageapplication operations) repeated in a single write/erase process. Here,a set value for the limitation by throttling is referred to as a load ora degree of throttling. As the load becomes heavier, the loop intervalis adjusted to be longer, and as the load becomes lighter, the loopinterval is adjusted to be shorter. Adjusting the degree of throttlingmeans adjusting the load. The degree of throttling can be adjusted by anotification from the processor 11 (operating in accordance withfirmware) to the NAND interface 14.

In the memory system 1 of the present embodiment, first, some ofperformance values (b1 of FIG. 4) from the start of use (fresh) to theexpiration of a lifetime (EOL) which are assumed if throttling is notperformed are acquired by, for example, measurement with successiveenvironmental conditions set. When a performance value (b2 of FIG. 4) atthe expiration of the lifetime of the memory system 1 which is assumedif throttling is not performed is acquired, a performance upper limit(first value: b3 of FIG. 4) is next set based on the acquiredperformance value. Here, a value obtained by increasing the baseperformance value by 10% is the performance upper limit. As the firstvalue, at least a value greater than the performance value at theexpiration of the lifetime is set. When the first value is set, aperformance lower limit (second value: b4 of FIG. 4) is then set betweenthe first value and the base performance value.

Moreover, a point in time of cross-point (b5 of FIG. 4) when theperformance value of the memory system 1 assumed if throttling is notperformed reaches the first value is determined. Then, the controller 10performs throttling while gradually adjusting the degree of throttling(b7 of FIG. 4) to make the actual performance value (b6 of FIG. 4) fallbetween the first value and the second value at least until the point intime of cross-point is exceeded.

Here, to promote an understanding of the control executed by thecontroller 10, over provisioning (OP) and a cluster encroachment ratewill be described with reference to FIG. 5 and FIG. 6.

A storage device such as the memory system 1 of the present embodimentis required to maintain a nominal storage capacity during its lifetime.To maintain the nominal storage capacity, the storage device generallyhas a storage capacity greater than the nominal amount, including aspare area, as shown in FIG. 5. Here, the proportion of an unused areain the whole spare area (margin rate) will be referred to as OP.

In addition, in the storage device such as the memory device 1 of thepresent embodiment, measures to increase immunity against errors arealso often taken by increasing a redundancy (parity) added to write datafor error correction, for example, the value of an error correcting code(ECC), in accordance with, for example, a decline in reliability due toan increase in the number of times of rewriting as shown in FIG. 6.Here, the ratio of the increment of the ECC to the sum of the amount ofuser data and the original value of the ECC will be referred to as acluster encroachment rate. The cluster encroachment rate represents thedegree by which a storage area for user data is encroached by the ECC.

The performance of sequential write of the memory system 1 does notdepend on the above-described OP, but depends on the cluster density ofa logical page (block), that is, the above-described clusterencroachment rate and a deficit. On the other hand, the performance ofrandom write of the memory system 1 greatly depends on the gear ratiocalculated from the above-described OP. The gear ratio is the ratio ofaccesses to the NAND memory 20 for writing data required by the hostdevice 2 to accesses to the NAND memory 20 for securing a space area. Aprocess for securing the space area, referred to as compaction, garbagecollection, etc., tends to be more often performed as the OP becomessmaller. Based on such a correlation, the gear ratio can be calculatedfrom the OP.

Originally, throttling should be performed based on the above-describedtwo factors. However, as described above, throttling is performed byadjusting a loop interval between write/erase operations (voltageapplication operations), irrespective of whether sequential write orrandom write is performed. Thus, these factors are insignificant.Therefore, in the memory system 1 of the present embodiment, the currentperformance value is calculated from the OP (having correlation with thegear ratio), assuming that the cluster density is also proportional tothe OP. Needless to say, a method of calculating the current performancevalue of the memory system 1 is not limited to this method, and othermethods can be adopted.

Moreover, in the memory system 1 of the present embodiment, the degreesof throttling for decreasing the respective performance values obtained,for example, at intervals of 5% between the performance value at thetime of the start of use and the performance value at the expiration ofa lifetime, to the above-described first value are each, for example,measured. The degrees of throttling are supplied to the controller 10 asa table in which they are held, for example, in the order from heaviestload.

FIG. 7 is a flowchart showing a general procedure through which thecontroller 10 controls the performance of the memory system 1 bythrottling.

The controller 10 first sets a degree of throttling to set theperformance value of the memory system 1 to the first value (step A1).The controller 10 checks the current performance value of the memorysystem 1 periodically (for example, at intervals of one minute), andexamines whether the performance value has decreased to the second value(step A2). As described above, the controller 10 herein checks thecurrent performance value of the memory system 1 by the current OP. Ifthe performance value has not decreased to the second value (No in stepA2), the controller 10 does nothing, and the degree of throttling ismaintained as it is.

If the performance value has decreased to the second value (Yes in stepA2), the controller 10 then examines whether the period of use hasexceeded the point in time of cross-point (step A3). If the point intime of cross-point has not been exceeded (No in step A3), thecontroller 10 changes the degree of throttling to return the performancevalue of the memory system 1 to the first value (step A4). Changing thedegree of throttling herein means reducing a load.

On the other hand, if the period of use has exceeded the point in timeof cross-point (Yes in step A3), the controller 10 stops throttling(step A5).

As described above, the controller 10 checks the current performancevalue of the memory system 1 periodically (for example, at intervals ofone minute). Next, an example of the periodic operations of thecontroller 10 will be described with reference to FIG. 8.

The controller 10 first determines the current OP (step B1), anddetermines the current performance value of the memory system 1 based onthe OP (step B2). The controller 10 examines whether the currentperformance value has decreased to the lower limit value (second value)(step B3). If the current performance value has decreased to the lowerlimit value (Yes in step B3), the controller 11 then checks the currentload, that is, a degree of throttling (step B4).

The controller 10 examines whether the current degree of throttling isgreater than the lower limit value (state in which throttling isstopped) (step B5). If there is room for decrease (Yes in step B5), thecontroller 10 decreases the degree of throttling (step B6).

The controller 10 operates under the above-described procedure, wherebythe throttling value is adjusted to gradually decrease, such that theperformance value of the memory system 1 falls between the first valueand the second value. Throttling is expected to be stopped at leastafter the period of use exceeds the point in time of cross-point.

It should be noted that, in a storage device such as the memory system 1of the present embodiment, for example, if a power supply voltagedecreases without any notice from the host device 2, a rapid action suchas storing data which is not completely made nonvolatile at this pointin time in the NAND memory 20 is required. Such a function forresponding to an erroneous power supply shutoff (unexpected power lossor power failure) is referred to as power loss protection (PLP), etc. Ifan erroneous power supply shutoff occurs in a situation in whichthrottling is performed, there is a possibility that data that couldhave been stored in the NAND memory 20 if the memory system 1 operateswith the original performance cannot be protected. Therefore, if anerroneous power supply shutoff is detected, the controller 10immediately stops throttling and performs a PLP process.

FIG. 9 is a flowchart showing a procedure for control related tothrottling of the controller 10 at the time of detection of an erroneouspower supply shutoff.

If a decrease in voltage is detected without any notice, etc., from thehost device 2 (Yes in step C1), the controller 10 examines whether ornot throttling is being performed (step C2). If throttling is beingperformed (Yes in step C2), the controller 10 removes a load, that is,sets the degree of throttling to zero, to immediately stop throttling(step C3), and performs a PLP process including writing data in the SRAM15 and the DRAM 30 to the NAND memory 20 (step C4).

The degree of throttling set for throttling at the time of detection ofan erroneous power supply shutoff is saved on the NAND memory 20 by thePLP process. Then, if the memory system 1 is restarted, the controller10 resumes throttling by the degree of throttling.

In addition, as shown in FIG. 1, the memory system 1 of the presentembodiment comprises the temperature sensor 40 for detecting atemperature in the vicinity of, for example, the controller 10 or theNAND memory 20 in the memory system 1. If the temperature detected bythe temperature sensor 40 exceeds, for example, the upper limit value ofa recommended operating temperature, the control of increasing thedegree of throttling to limit the number of times of accesses per unittime to the NAND memory 20 may also be executed in order to lower thetemperature in the memory system 1 to the recommended operatingtemperature.

In this manner, according to the memory system 1 of the presentembodiment, the performance of an SSD can be appropriately controlled inconsideration of a lifetime.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A memory system comprising: a nonvolatile memorycomprising a first storage area and a second storage area, the secondstorage area being a spare area in a storage area of the nonvolatilememory; and a processor configured to: start to control throttling basedon a status of the second storage area in accordance with a commandconforming to a certain interface standard and related to a setting ofthe memory system from a host device, the throttling limiting the numberof times of accesses per unit time to the nonvolatile memory; and stopthe throttling after a certain time period has elapsed.
 2. The memorysystem of claim 1, wherein the processor is configured to removelimitation by the throttling in accordance with unexpected power loss orpower failure being detected.
 3. The memory system of claim 2, whereinthe processor is configured to resume limitation by the throttlingperformed in accordance with the unexpected power loss or the powerfailure being detected, when the memory system is restarted after theunexpected power loss or power failure is detected.
 4. The memory systemof claim 1, further comprising a temperature sensor, wherein theprocessor is configured to control the throttling based on a temperaturedetected by the temperature sensor.
 5. The memory system of claim 1,wherein the throttling limits the number of times of accesses per unittime to the nonvolatile memory by adjusting a loop interval betweenwrite/erase operations repeated in a write/erase process for thenonvolatile memory.
 6. The memory system of claim 1, wherein the commandfrom the host device is a MODE SELECT command conforming to a SCSIstandard and transferring a Control Extension mode page with a devicelife control (DLC) bit set to zero.
 7. A controlling method of a memorysystem comprising a nonvolatile memory including a first storage areaand a second storage area, the second storage area being a spare area ina storage area of the nonvolatile memory, the method comprising:starting to control throttling based on a status of the second storagearea in accordance with a command conforming to a certain interfacestandard and related to a setting of the memory system from a hostdevice, the throttling limiting the number of times of accesses per unittime to the nonvolatile memory; and stopping the throttling after acertain time period has elapsed.
 8. The controlling method of claim 7,further comprising removing limitation by the throttling in accordancewith unexpected power loss or power failure being detected.
 9. Thecontrolling method of claim 8, further comprising resuming limitation bythe throttling performed in accordance with the unexpected power loss orthe power failure being detected, when the memory system is restartedafter the unexpected power loss or power failure is detected.
 10. Thecontrolling method of claim 7, further comprising controlling thethrottling based on a temperature detected by a temperature sensorincluded in the memory system.
 11. The controlling method of claim 7,wherein the throttling limits the number of times of accesses per unittime to the nonvolatile memory by adjusting a loop interval betweenwrite/erase operations repeated in a write/erase process for thenonvolatile memory.
 12. The controlling method of claim 7, wherein thecommand from the host device is a MODE SELECT command conforming to aSCSI standard and transferring a Control Extension mode page with adevice life control (DLC) bit set to zero.
 13. A controlling method of amemory system comprising a nonvolatile memory including a first storagearea and a second storage area, the second storage area being a sparearea in a storage area of the nonvolatile memory, the method comprising:controlling throttling based on a status of the second storage areaduring a time period that has elapsed since the memory system startedbeing used, the throttling limiting the number of times of accesses perunit time to the nonvolatile memory; and stopping the throttling afterthe time period has elapsed.
 14. The controlling method of claim 13,further comprising removing limitation by the throttling in accordancewith unexpected power loss or power failure being detected.
 15. Thecontrolling method of claim 14, further comprising resuming limitationby the throttling performed in accordance with the unexpected power lossor the power failure being detected, when the memory system is restartedafter the unexpected power loss or power failure is detected.
 16. Thecontrolling method of claim 13, further comprising controlling thethrottling based on a temperature detected by a temperature sensorincluded in the memory system.
 17. The controlling method of claim 13,wherein the throttling limits the number of times of accesses per unittime to the nonvolatile memory by adjusting a loop interval betweenwrite/erase operations repeated in a write/erase process for thenonvolatile memory.
 18. The controlling method of claim 13, wherein thecontrolling the throttling is started after receiving a command from ahost device, the command being a MODE SELECT command conforming to aSCSI standard and transferring a Control Extension mode page with adevice life control (DLC) bit set to zero.